Variation-Aware Advanced CMOS Devices and SRAM
Dordrecht : Springer Netherlands : Imprint: Springer, 2016
Abstract/Sommario:
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the intro ...; [leggi tutto]
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| Descrizione | Variation-Aware Advanced CMOS Devices and SRAM / by Changhwan Shin. - Dordrecht : Springer Netherlands : Imprint: Springer, 2016. - VII, 140 p. 118 ill., 101 ill. in color ; online resource. - (Springer Series in Advanced Microelectronics ; 56) |
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1 Introduction and Overview -- 2 Understanding of Process-Induced Random Variation -- 3 Various Variation-Robust CMOS Device Designs -- 4 Applications to Static Random Access Memory (SRAM) -- 5 Conclusion. - Springer eBooks. - Printed edition: 9789401775953
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| ID scheda | 139595 |
| Permalink | https://www.opac.inaf.it/?ids=139595 |